s m d ty p e w w w . k e x i n . c o m . c n 1 m osf e t n- ch an n el m osf et 2s k3018 f e a tu r e s v d s ( v ) = 3 0 v i d = 0 . 1 a r d s ( o n ) 8 ( v g s = 4 v ) r d s ( o n ) 1 3 ( v g s = 2 . 5 v ) a b s o l u te m a x i m u m ra ti n g s t a = 2 5 p a r a m e t e r s y m b o l r a t i n g u n i t d r a i n - s o u r c e v o l t a g e v d s 3 0 g a t e - s o u r c e v o l t a g e v g s 2 0 c o n t i n u o u s d r a i n c u r r e n t i d 1 0 0 p u l s e d d r a i n c u r r e n t ( n o t e . 1 ) i d m 4 0 0 p o w e r d i s s i p a t i o n p d 2 0 0 m w j u n c t i o n t e m p e r a t u r e t j 1 5 0 s t o r a g e t e m p e r a t u r e r a n g e t s t g - 5 5 t o 1 5 0 v m a n o t e . 1 : p w 1 0 u s , d u t y c y c l e 1 % e l e c tr i c a l ch a r a c te r i s ti c s t a = 2 5 p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n t y p m a x u n i t d r a i n - s o u r c e b r e a k d o w n v o l t a g e v d s s i d = 2 5 0 a , v g s = 0 v 3 0 v z e r o g a t e v o l t a g e d r a i n c u r r e n t i d s s v d s = 3 0 v , v g s = 0 v 1 u a g a t e - b o d y l e a k a g e c u r r e n t i g s s v d s = 0 v , v g s = 2 0 v 1 u a g a t e t h r e s h o l d v o l t a g e v g s ( t h ) v d s = 3 v , i d = 0 . 1 m a 0 . 8 1 . 5 v v g s = 4 v , i d = 1 0 m a 8 v g s = 2 . 5 v , i d = 1 m a 1 3 f o r w a r d t r a n s c o n d u c t a n c e g f s v d s = 3 v , i d = 1 0 m a 2 0 m s i n p u t c a p a c i t a n c e c i ss 1 3 o u t p u t c a p a c i t a n c e c o ss 9 r e v e r s e t r a n s f e r c a p a c i t a n c e c r ss 4 t u r n - o n d e l a y t i m e t d ( o n ) 1 5 t u r n - o n r i s e t i m e t r 3 5 t u r n - o f f d e l a y t i m e t d ( o f f ) 8 0 t u r n - o f f f a l l t i m e t f 8 0 s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e v g s = 0 v , v d s = 5 v , f = 1 m h z p f n s v g s = 5 v , v d s = 5 v , i d = 1 0 m a , r l = 5 0 0 , r g = 1 0 r d s ( o n ) m a r k i n g m a r k i n g k n drain source gate gate protection diode 0.4 +0.1 -0.1 2.9 +0.2 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 3 unit: mm sot-23-3 1 . 6 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1 1 . gate 2 . source 3 . drain
s m d ty p e w w w . kexin . com . c n 2 m osfe t n- ch an n el m osf et 2s k3018 t y p i c a l ch a r a c te r i s i ti c s 0 1 2 3 4 5 0 0.05 0.1 0.15 drain current : i d (a) drain-source voltage : v ds (v) 3v 3.5v 2.5v v gs =1.5v 4v 2v ta=25 c pulsed fig.1 typical output characteristics 4 0 0.1m 100m drain current : i d (a) gate-source voltage : v gs (v) 1 10m 3 2 1m 0.2m 0.5m 2m 5m 50m 20m 200m ta=125 c 75 c 25 c ? 25 c v ds =3v pulsed fig.2 typical transfer characteristics ? 50 0 0 1 1.5 2 gate threshold voltage : v gs (th) (v) channel temperature : tch ( c ) 0.5 ? 25 25 50 75 100 125 150 fig.3 gate threshold voltage vs. channel temperature v ds =3v i d =0.1ma pulsed 0.001 1 2 50 static drain-source on-state resistance : r ds (on) (?) drain current : i d (a) 0.5 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 20 ta=125 c 75 c 25 c ? 25 c v gs =4v pulsed fig.4 static drain-source on-state resistance vs. drain current ( ) 0.001 1 2 50 static drain-source on-state resistance : r ds (on) (?) drain current : i d (a) 0.5 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 20 ta=125 c 75 c 25 c ? 25 c v gs =2.5v pulsed fig.5 static drain-source on-state resistance vs. drain current ( ? ) 0 5 10 15 20 0 5 10 15 gate-source voltage : v gs (v) i d =0.1a static drain-source on-state resistance : r ds (on) ( ) ta=25 c pulsed i d =0.05a fig.6 static drain-source on-state resistance vs. gate-source voltage ? 50 0 25 150 0 3 6 9 channel temperature : tch ( c) static drain-source on-state resistance : r ds (on) ( ? ) ? 25 50 75 100 125 2 1 4 5 7 8 fig.7 static drain-source on-state resistance vs. channel temperature v gs =4v pulsed i d =100ma i d =50ma 0.0001 0.001 0.01 0.02 0.5 forward transfer admittance : |yfs| (s) drain current : i d (a) 0.005 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.05 0.1 0.2 0.1 0.2 0.5 0.002 ta=? 25 c 25 c 75 c 125 c v ds =3v pulsed fig.8 forward transfer admittance vs. drain current 200m reverse drain current : i dr (a) source-drain voltage : v sd (v) 1.5 1 0.5 0 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m v gs =0v pulsed ta=125 c 75 c 25 c ? 25 c fig.9 reverse drain current vs. source-drain voltage ( )
s m d ty p e w w w . k e x i n . c o m . c n 3 m osf e t n- ch an n el m osf et 2s k3018 t y p i c a l ch a r a c te r i s i ti c s 200m reverse drain current : i dr (a) source-drain voltage : v sd (v) 1.5 1 0.5 0 100m 50m 20m 10m 5m 2m 1m 0.5m 0.2m 0.1m ta=25 c pulsed v gs =4v 0v fig.10 reverse drain current vs. source-drain voltage ( ? ) 0.1 1 2 50 capacitance : c (pf) drain-source voltage : v ds (v) 0.5 0.2 0.5 1 2 5 10 20 50 5 10 20 fig.11 typical capacitance vs. drain-source voltage c iss c oss c rss ta =25 c f=1mh z v gs =0v 0.1 10 20 500 switching time : t (ns) drain current : i d (ma) 5 0.2 0.5 1 2 5 10 20 50 50 100 200 1000 2 100 fig.12 switching characteristics (see figures 13 and 14 for the measurement circuit and resultant waveforms) ta =25 c v dd =5v v gs =5v r g =10? pulsed t d(off) t r t d(on) t f fig.13 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd 90% 50% 10% 90% 10% 50% pulse width 10% v gs v ds 90% t f t off t d(off) t r t on t d(on) fig.14 switching time waveforms
|
